Elastic and Drift-diiusion Limits of Electron-phonon Interaction in Semiconductors
نویسندگان
چکیده
This paper is concerned with electron transport in semiconductors when electron-phonon interaction is considered. Smallness of the mean free path compared to a characteristic length scale and of the phonon energy compared to the thermal energy of the crystal are assumed. The corresponding limits in the transport problem are carried out and shown not to commute. An intermediate limit leads to a new macroscopic model.
منابع مشابه
Relaxation time approximation forelectron - phonon interaction insemiconductorsPeter
A Boltzmann equation for semiconductors is considered. Physical assumptions include the parabolic band approximation and a new relaxation time model for electron-phonon interaction. Thermal equilibrium distributions for this scattering mechanism are products of Maxwellian distributions with periodic functions of the energy, where the period is the energy of a phonon. The hydrodynamic limit is c...
متن کاملEnergy-transport models for charge carriers involving impact ionization in semiconductors
Energy-transport models taking into account impact ionization are derived from a kinetic framework by formal asymptotic methods. The derivation is based on a system of Boltzmann transport equations governing the distribution functions of conduction electrons and holes in a semiconductor. The charge carriers are assumed to obey a degenerate gas statistics. The energy exchanged during collisions ...
متن کاملQualitative Behavior of Weak Solutions of the Drift Diiusion Model for Semiconductor Devices Coupled with Maxwell S Equations
The transient drift-diiusion model describing the charge transport in semiconductors is considered. Poisson's equation, which is usually used, is replaced by Maxwell's equations. The diiusion-and mobility-coeecients and the dielectric and magnetic susceptibilities may depend on the space-variables. Global existence and convergence to the thermal equilibrium is shown.
متن کاملThe Energy Transport and the Drift Di usionEquations as Relaxation Limits of theHydrodynamic Model
Two relaxation limits of the hydrodynamic model for semiconductors are investigated. Using the compensated compactness tools we show the convergence of (scaled) entropy solutions of the hydrodynamic model to the solutions of the energy transport and the drift{diiusion equations, according respectively to diierent time scales.
متن کاملDeformation electron-phonon coupling in disordered semiconductors and nanostructures.
We study the electron-phonon relaxation (dephasing) rate in disordered semiconductors and low-dimensional structures. The relaxation is determined by the interference of electron scattering via the deformation potential and elastic electron scattering from impurities and defects. We have found that in contrast with the destructive interference in metals, which results in the Pippard ineffective...
متن کامل